JPS641941B2 - - Google Patents

Info

Publication number
JPS641941B2
JPS641941B2 JP51099076A JP9907676A JPS641941B2 JP S641941 B2 JPS641941 B2 JP S641941B2 JP 51099076 A JP51099076 A JP 51099076A JP 9907676 A JP9907676 A JP 9907676A JP S641941 B2 JPS641941 B2 JP S641941B2
Authority
JP
Japan
Prior art keywords
silicon layer
layer
polycrystalline silicon
region
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP51099076A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5324277A (en
Inventor
Reiji Takashina
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP9907676A priority Critical patent/JPS5324277A/ja
Publication of JPS5324277A publication Critical patent/JPS5324277A/ja
Publication of JPS641941B2 publication Critical patent/JPS641941B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP9907676A 1976-08-18 1976-08-18 Semiconductor devic e and its production Granted JPS5324277A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9907676A JPS5324277A (en) 1976-08-18 1976-08-18 Semiconductor devic e and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9907676A JPS5324277A (en) 1976-08-18 1976-08-18 Semiconductor devic e and its production

Publications (2)

Publication Number Publication Date
JPS5324277A JPS5324277A (en) 1978-03-06
JPS641941B2 true JPS641941B2 (en]) 1989-01-13

Family

ID=14237817

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9907676A Granted JPS5324277A (en) 1976-08-18 1976-08-18 Semiconductor devic e and its production

Country Status (1)

Country Link
JP (1) JPS5324277A (en])

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54155771A (en) * 1978-05-29 1979-12-08 Nec Corp Pattern forming method
US4234362A (en) * 1978-11-03 1980-11-18 International Business Machines Corporation Method for forming an insulator between layers of conductive material
US4209349A (en) * 1978-11-03 1980-06-24 International Business Machines Corporation Method for forming a narrow dimensioned mask opening on a silicon body utilizing reactive ion etching
JPS5591130A (en) * 1978-12-27 1980-07-10 Matsushita Electric Ind Co Ltd Production of semiconductor device
US4234357A (en) * 1979-07-16 1980-11-18 Trw Inc. Process for manufacturing emitters by diffusion from polysilicon
JPS6222395Y2 (en]) * 1980-01-24 1987-06-06
JPS5731789Y2 (en]) * 1980-01-16 1982-07-13
JPS56137657A (en) * 1980-03-29 1981-10-27 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS5832434A (ja) * 1981-08-20 1983-02-25 Toshiba Corp 半導体装置の製造方法
JPS6297332A (ja) * 1986-10-24 1987-05-06 Matsushita Electric Ind Co Ltd Ｍｏｓトランジスタの製造方法

Also Published As

Publication number Publication date
JPS5324277A (en) 1978-03-06

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